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RPI Chemistry & Chemical Biology Fall 2019 Seminar Series
November 5 @ 4:00 pm - 5:00 pm
The Department of Chemistry and Chemical Biology Fall Seminar Series presents:
Professor Robert L. Brainard
Colleges of Nanoscale Science and Engineering
SUNY Polytechnic Institute
“Molecular Organometallic Resists for Extreme Ultra Violet (EUV) Lithography (13.5 nm)”
For the past 50 years, the microelectronics industry has been on a relentless pace to improve the performance of integrated circuits (ICs) by fabricating more transistors onto every chip. One technology which has made these dramatic improvements possible has been photoresists. Central to improving the resolution capability of photoresists has been the successive reduction in the wavelength of light used to expose them. Currently, the microelectronics industry is undergoing a jump in wavelength from 193 to 13.5 nm. This new imaging technology is called Extreme Ultraviolet (EUV) Lithography.
For decades, manufacture of ICs required metallic contamination in all chemicals be kept <20 ppb. Our group began to synthesize and lithographically evaluate compounds with most of the highly-absorbing metals in the periodic table. Our group has successfully invented EUV photoresists composed of amorphous thin-films of compounds containing Co, Sn, Pt, Pd, Bi, and Sb in our project called Molecular Organometallic Resists for EUV (MORE).
Here, I will describe four of our most successful organometallic compounds. The Co complex, exhibits high sensitivity and interesting electrochemistry. The Pd complex represents the only positive-tone (becomes more soluble upon exposure) MORE resist. The Sn complex provides extraordinary image quality (smooth line-edge-roughness). Lastly, I will present on the penta-coordinate antimony resists that have demonstrated remarkable sensitivity.